Solar Cell Technologies

Crystalline cells
Polycrystalline as well as monocrystalline cells belong into this group. The basic form for crystalline cells is silicon ingot (please see procedure description above). The ingot (block of silicon), sawn with diamond saw into thin silicon wafers, is a foundation for cell . Wafers of 1 mm in thickness sawn with 1/10 mm precision are placed between two plan-parallel metal plates, which rotate into opposite directions. The procedure enables wafer thickness adjustment to 1/1000 mm precisely. The subsequent cell procedure consists of the following steps:
Doped wafers are first etched some micro-metres deep. The procedure removes crystal-structure irregularities caused by sawing and provides wafer cleaning. The material is doped as melt at polycrystal silicon or adequate gas is added whilst extracting pure silicon.
The above procedure is followed by diffusion. Phosphorus, which is supplied inside the material in gaseous form, diffuses at the temperature of 800°C. N doped layer and oxide layer rich with phosphorus form on top of wafers due to oxygen reaction.
Wafers are then folded to form a cube and etched in oxygen plasma, removing N layer from the edges.
The following phase removes oxide layers from top of wafer by wet chemical etching.
In the back, contact surface is produced from silver containing 1% aluminium. Special procedures enable silver print over mask on cell surface.
Pressed cells are then sintered at high temperatures.
Similar procedure is used to print contacts in the front cell surface.
Anti-reflex layer is applied in a similar manner. We have titanium paste at choice, which at sintering form titanium dioxide TiO2 or silicon nitride Si3N4.
Amorphous cells
Amorphous cells are produced with similar technological procedures than integrated circuits. Due to the procedure these modules are also known as thin-film cells (thin-film modules). Herein, amorphous cells is described briefly:
Glass substrate is thoroughly cleaned.
Lower contact layer is applied
The surface is then structured – divided into bands.
In vacuum, under high frequency electric field amorphous silicon layer is applied.
The surface is re-banded.
Upper metal electrodes are fixated.
Other cells
Among less frequently used cell types we find cells produced by EFG (Edge Defined Film fed Growth) method and Apex cells from silicon, cadmium telluride cells and copper-indium selenide (CIS) cells. EFG monocrystalline cells are produced directly from silicon melt eliminating sawing to wafers, which results in lower costs and material saving for there is no waste due to sawing. Using EFG procedure, a silicon ribbon shaped in proper tube with eight flat sides is drawn from silicon melt. The tube length amounts to several metres. Flat sides are sawn by laser into separate cells. Most cells are proper square shaped in dimension of 100×100 mm. Consequently, the module power is greater with lesser surface compared to crystal modules of square shaped cells with truncated sides. Contacts are made in shape of copper bands. Separate cells are then combined in a similar manner than with other cell types. EFG cells are produced by Schott . In contrast to EFG cells, Apex cells are poly-crystalline. Their procedure is protected. procedure was developed by Astropower Inc. Cadmium telluride and copper-indium selenide (CIS) cells are thus far scarcely used, mostly in lab research. Commercial modules from above mentioned materials are still hard to find. In the table below you will find comparison between different cell types with their advantages and disadvantages.

Material

Thickness

Efficiency

Colour

Features

Monocrystalline Si cells

0,3 mm

15 – 18 %

Dark blue, black with AR coating, grey without AR coating

Lengthy procedure, wafer sawing necessary. Best researched cell material – highest power/area ratio.

Polycrystalline Si cells

0,3 mm

13 – 15 %

Blue with AR coating, silver-grey without AR coating

Wafer sawing necessary. Most important procedure at least for the next ten years.

Polycrystalline transparent Si cells

0,3 mm

10 %

Blue with AR coating, silver-grey without AR coating

Lower efficency than monocrystalline cells. Attractive cells for different BIPV applications.

EFG

0,28 mm

14 %

Blue, with AR coating

Limited use of this procedure Very fast crystal growth, no wafer sawing neccesary

Polycrystalline ribbon Si cells

0,3 mm

12 %

Blue, with AR coating, silver-grey without AR coating

Limited use of this procedure, no wafer sawing neccesary. Decrease in costs expected in the future.

Apex (polycrystaline Si) cells

0,03 to 0,1 mm + ceramic substrate

9,5 %

Blue, with AR coating, silver-grey without AR coating

procedure used only by one producer, no wafer sawing, in form of band possible. Significant decrease in costs expected in the future.

Monocrystaline dendritic web Si cells

0,13 mm incl contacts

13 %

Blue, with AR coating

Limited use of this procedure, no wafer sawing, in form of band possible.

Amorphous silicon

0,0001 mm + 1 to 3 mm substrate

5 – 8 %

Red-blue, Black

Lower efficiency, shorter life span. No sawing necessary, possible in the form of band.

Cadmium Telluride (CdTe)

0,008 mm + 3 mm glass substrate

6 – 9 % (module)

Dark green, Black

Poisonous raw materials, significant decrease in costs expected in the future.

Copper-Indium-
Diselenide (CIS)

0,003 mm + 3 mm glass substrate

7,5 – 9,5 % (module)

Black

Limited Indium supply in nature. Significant decrease in costs possible in the future.

Hybrid silicon (HIT) cell

0,02 mm

18 %

Dark blue, black

Limited use of this procedure, higher efficiency, better temperature coefficient and lower thickness.

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