ATHLET -  Advanced thin-film technologies for cost effective photovoltaics.

The project aims to accelerate the decrease in the cost/efficiency ratio for thin-fi lm photovoltaic modules. It focuses on technologies based on amorphous, micro- and polycrystalline silicon as well as on I-III-VI2- chalcopyrite compound semi-conductors. The work centers on large-area
chalcopyrite modules with improved efficiencies and on the up-scaling of silicon-based tandem solar cells. This is complemented by a range of activities from the demonstration of lab scale cells with higher efficiencies to the work on module aspects relevant to all thin-film solar cells.

Approach
For the first time, research in amorphous, micro- and polycrystalline silicon as well as in chalcopyrite technologies is being undertaken within a single project. The research activities range from fundamental research to industrial implementation. This features short feedback
loops and benefit from the synergies between partners with specific expertise. A unique facility is the virtual lab for device analysis and modeling. 

Results to date
In the field of flexible solar cells a first copper indium gallium diselenide (CIGS) cell has been prepared on polyimide with a world record efficiency of 14.1 %. Cu(In,Ga) Se2 cells on titanium cells were further developed and exhibit now up to 16 % on small area.
For compound buffer layers, two different chemical bath deposition (CBD) processes for zinc sulphide, oxide (Zn(S,O)) have reached a high status of development, demonstrated by manufacturing of 30 x 30 cm² Cu(In,Ga) (Se,S)2 modules exceeding 12 % aperture area efficiency.
New buffer layer deposition techniques based on spray techniques have been improved to best cell efficiencies of 12.4 % for USP-indium selenide buffers and 15.3 % for ILGAR-zinc sulphide/indium sulphide buffers, both deposited on Cu(In,Ga)(Se,S)2 absorbers. With ILGAR-In2S3 buffers, 10 x 10 cm² mini-modules have been processed with a best aperture area efficiency of 12.4 % and proved to have comparable damp-heat stability to cadmium sulphide-buffered references.
Two routes are followed in the investigation of thin-film polycrystalline silicon solar cells: the intermediate temperature route (up to 650 °C) and the high temperature route (700-1 200 °C). In the latter approach, seed layers were prepared on glass-ceramic substrates with grains up to
16 μm. The current density of these polysilicon cells on alumina was increased from around 17 mA cm-2 to around 20 mA/cm-2. This led to an efficiency increase from 5.9 % to 7 %.

Concerning microcrystalline silicon single-junction cells, the current has been increased by reducing the optical losses in the transparent conductors layers due to improved zinc oxide with lower free carrier concentration. Titanium oxide anti-reflective layers are also being developed to
further reduce primary reflection. Record μc-Si:H cells were achieved with an efficiency of 10 %. Cells with short circuit current density values close to 26 mA/cm², but with lower efficiencies, have also been obtained.
On the industrial side, processes optimized on intermediate sizes (30 x 30 cm2 – 40 x 50 cm2) were transferred to full size 1.4 m2 micromorph modules with aperture initial efficiency up to 9,6 % were fabricated.

More information:http://www.ip-athlet.eu/index.html

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